Electronic structure of a narrow-gap semiconductor FeGa<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>investigated by photoemission and inverse photoemission spectroscopies

Masashi Arita(Niigata University Medical and Dental Hospital), T. Takabatake(Hiroshima University), Yuta Hadano(Hiroshima University), Osamu Morimoto(Hiroshima University), M. Taniguchi(Hiroshima University), H. Namatame(Hiroshima University), Yuki Utsumi(Hiroshima University), H. Sato(Hiroshima University), K. Shimada(Hiroshima University)
Physical Review B
June 22, 2011
Cited by 25


Related Papers