Two‐dimensional In<sub>2</sub>Se<sub>3</sub>: A rising advanced material for ferroelectric data storageYuting Huang, Xianbin Li, Xuepeng Wang et al.|InfoMat|2022Cited by 126
Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase changeYuting Huang, Shengbai Zhang, Nian‐Ke Chen et al.|Applied Physics Reviews|2021Cited by 26
Complex charge density waves in simple electronic systems of two-dimensional III2–VI3 materialsYuting Huang, Xianbin Li, Shengbai Zhang et al.|Nature Communications|2024Cited by 8