Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change
Yuting Huang(Jilin University), Shengbai Zhang(National Laboratory of the Rockies), Xuepeng Wang(Jilin University), Hong‐Bo Sun(Jilin University), Zhen‐Ze Li(Jilin University), Nian‐Ke Chen(Jilin University), Qi‐Dai Chen(State Key Laboratory on Integrated Optoelectronics), Xianbin Li(Jilin University)
Cited by 26
Related Papers
Intrinsic<i>n</i>-type versus<i>p</i>-type doping asymmetry and the defect physics of ZnO
|Physical review. B, Condensed matter|2001|1.8k
Defect physics of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CuInSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>chalcopyrite semiconductor
|Physical review. B, Condensed matter|1998|1.4k
Origin of<i>p</i>-type doping difficulty in ZnO: The impurity perspective
|Physical review. B, Condensed matter|2002|1.1k
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
|Physical review. B, Condensed matter|2002|652