Identification of Vacancies on each Sublattice of SiC by Coincident Doppler Broadening of the Positron Annihilation Photons after Electron IrradiationMarkus Müller, Hans Schaefer, Al. Rempel et al.|Materials science forum|2001Cited by 14
Chemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening TechniqueAl. Rempel, Hans Schaefer, Wolfgang Sprengel et al.|Materials science forum|2002Cited by 7
High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single CrystalsChristoph Seitz, Hans Schaefer, Al. Rempel et al.|Materials science forum|2003Cited by 4
Identification of Lattice Vacancies and Structural Phase Transitions in Solids by Positron Annihilation SpectroscopyWolfgang Sprengel, Hans Schaefer, K. Sato et al.|Materials science forum|2004Cited by 1