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Yanfeng Wei

Guilin University of Electronic Technology

Publishes on Advanced Semiconductor Detectors and Materials, Semiconductor Quantum Structures and Devices, Chalcogenide Semiconductor Thin Films. 30 papers and 100 citations.

30Publications
100Total Citations

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Top publicationsby citations

ZnGa <sub>2</sub> S <sub>4</sub> : an infrared nonlinear optical material with large second‐harmonic generation response and wide band gap
Chenyang Zhang, Xiao-Nan Niu, Yanfeng Wei et al.|Rare Metals|2023
Cited by 25

摘要 高性能的非线性光学晶体是实现固体激光器波长转换的关键器件。硫属化合物在红外非线性光学材料的研究中起着不可或缺的作用。本工作筛选出了具有缺陷类金刚石结构的三元硫属化合物ZnGa2S4,并采用化学气相传输法生长了该晶体。它具有高的倍频响应(1.36 × AgGaS 2 )和宽的带隙(3.18 eV)。ZnGa 2 S 4 晶体在空气中具有良好的化学稳定性。这些特性表明ZnGa2S4具有很大的潜力成为红外非线性光学材料。

Large-language models facilitate discovery of the molecular signatures regulating sleep and activity
Di Peng, Liubin Zheng, Dan Liu et al.|Nature Communications|2024
Cited by 24Open Access

Sleep, locomotor and social activities are essential animal behaviors, but their reciprocal relationships and underlying mechanisms remain poorly understood. Here, we elicit information from a cutting-edge large-language model (LLM), generative pre-trained transformer (GPT) 3.5, which interprets 10.2-13.8% of Drosophila genes known to regulate the 3 behaviors. We develop an instrument for simultaneous video tracking of multiple moving objects, and conduct a genome-wide screen. We have identified 758 fly genes that regulate sleep and activities, including mre11 which regulates sleep only in the presence of conspecifics, and NELF-B which regulates sleep regardless of whether conspecifics are present. Based on LLM-reasoning, an educated signal web is modeled for understanding of potential relationships between its components, presenting comprehensive molecular signatures that control sleep, locomotor and social activities. This LLM-aided strategy may also be helpful for addressing other complex scientific questions.

Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe
Rui Q. Yang, Kuang‐Hong Gao, Laiming Wei et al.|Applied Physics Letters|2011
Cited by 9Open Access

Magnetoconductance of a gated two-dimensional electron gas (2DEG) in an inversion layer on a p-type HgCdTe film is investigated. At strong magnetic fields, characteristic features such as the quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, the weak antilocalization effect in the ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted following Golub’s model [L. E. Golub, Phys. Rev. B 71, 235310 (2005)]. The temperature dependence of the dephasing rate is consistent with the Nyquist mechanism.