Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe
Rui Q. Yang(Shanghai Institute of Technical Physics), Kuang‐Hong Gao(Shanghai Institute of Technical Physics), Laiming Wei(Shanghai Institute of Technical Physics), Xinzhi Liu(Shanghai Institute of Technical Physics), Gujin Hu(Shanghai Institute of Technical Physics), Guolin Yu(Shanghai Institute of Technical Physics), Tie Lin(Shanghai Institute of Technical Physics), Shaoling Guo(Shanghai Institute of Technical Physics), Yanfeng Wei(Shanghai Institute of Technical Physics), Jianrong Yang(Shanghai Institute of Technical Physics), He Li(Shanghai Institute of Technical Physics), Ning Dai(Shanghai Institute of Technical Physics), Junhao Chu(Shanghai Institute of Technical Physics), D. G. Austing(Institute for Microstructural Sciences)
Cited by 9Open Access
Abstract
Magnetoconductance of a gated two-dimensional electron gas (2DEG) in an inversion layer on a p-type HgCdTe film is investigated. At strong magnetic fields, characteristic features such as the quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, the weak antilocalization effect in the ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted following Golub’s model [L. E. Golub, Phys. Rev. B 71, 235310 (2005)]. The temperature dependence of the dephasing rate is consistent with the Nyquist mechanism.
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