Extremely Large Gate Modulation in Vertical Graphene/WSe<sub>2</sub> Heterojunction Barristor Based on a Novel Transport Mechanism
Jaewoo Shim(Massachusetts Institute of Technology), Jin‐Hong Park(LG (United States)), Hyo Seok Kim(Korea Advanced Institute of Science and Technology), Jaehyeong Lee(Sungkyunkwan University), Hyung‐Youl Park(Sungkyunkwan University), Jaeho Jeon(Sungkyunkwan University), Seong Jun Jung(Sungkyunkwan University), Sungjoo Lee(Tohoku University), Jaeho Lee(Samsung (South Korea)), Yong‐Hoon Kim(Korea Advanced Institute of Science and Technology), Dong‐Ho Kang(Sungkyunkwan University), Seongjun Park(Korea Advanced Institute of Science and Technology), Jeehwan Kim(Massachusetts Institute of Technology), Woo‐Shik Jung(Stanford University), Yoon Su Shim(Korea Advanced Institute of Science and Technology), Young Jae Song(Sungkyunkwan University)
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