Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistorsKwan‐Ho Kim, Deep Jariwala, Nicholas Trainor et al.|Nature Nanotechnology|2023Cited by 209
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor MemoryXiwen Liu, Deep Jariwala, Jinshui Miao et al.|Nano Letters|2021Cited by 173
A scalable ferroelectric non-volatile memory operating at 600 °CDhiren K. Pradhan, Deep Jariwala, W. Joshua Kennedy et al.|Nature Electronics|2024Cited by 95
Tuning Polarity in WSe<sub>2</sub>/AlScN FeFETs via Contact EngineeringKwan‐Ho Kim, Deep Jariwala, Nicholas Trainor et al.|ACS Nano|2024Cited by 56
Multistate, Ultrathin, Back-End-of-Line-Compatible AlScN Ferroelectric DiodesKwan‐Ho Kim, Deep Jariwala, Dhiren K. Pradhan et al.|ACS Nano|2024Cited by 46