Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Xiwen Liu(Rensselaer Polytechnic Institute), Deep Jariwala(California University of Pennsylvania), Kwan‐Ho Kim(Korea Telecom (South Korea)), Dixiong Wang(University of Pennsylvania), Jeffrey Zheng(University of Pennsylvania), Jinshui Miao(Shanghai Institute of Technical Physics), Pariasadat Musavigharavi(University of Pennsylvania), Eric A. Stach(University of Pennsylvania), Roy H. Olsson(University of Pennsylvania), Keshava Katti(University of Pennsylvania)
Nano Letters
April 21, 2021
Cited by 173


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