GeSe-Based Ovonic Threshold Switching Volatile True Random Number GeneratorZheng Chai, J. F. Zhang, James Brown et al.|IEEE Electron Device Letters|2019Cited by 41
Evidence of filamentary switching and relaxation mechanisms in Ge<sub>x</sub>Se<sub>1-x</sub>OTS selectorsGouri Sankar Kar, Weidong Zhang, R. Degraeve et al.|Unknown|2019Cited by 40
Dependence of Switching Probability on Operation Conditions in Ge<sub>x</sub>Se<sub>1–x</sub>Ovonic Threshold Switching SelectorsZheng Chai, Gouri Sankar Kar, Weidong Zhang et al.|IEEE Electron Device Letters|2019Cited by 35
Endurance improvement of more than five orders in Ge<sub>x</sub>Se<sub>1-x</sub> OTS selectors by using a novel refreshing program schemeFiras Odai Hatem, Gouri Sankar Kar, Weidong Zhang et al.|Unknown|2019Cited by 31
Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching SelectorZheng Chai, Gouri Sankar Kar, Weidong Zhang et al.|IEEE Electron Device Letters|2021Cited by 21