GeSe-Based Ovonic Threshold Switching Volatile True Random Number GeneratorZheng Chai, J. F. Zhang, Gouri Sankar Kar et al.|IEEE Electron Device Letters|2019Cited by 41
Dependence of Switching Probability on Operation Conditions in Ge<sub>x</sub>Se<sub>1–x</sub>Ovonic Threshold Switching SelectorsZheng Chai, Gouri Sankar Kar, Weidong Zhang et al.|IEEE Electron Device Letters|2019Cited by 35
Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching SelectorZheng Chai, Gouri Sankar Kar, Ludovic Goux et al.|IEEE Electron Device Letters|2021Cited by 21