Direct observation of voids in the vacancy excess region of ion bombarded siliconJ. S. Williams, J. Wong‐Leung, M. Conway et al.|Applied Physics Letters|2001Cited by 29
Interactions of Point Defects and Impurities With Open Volume Defects in SiliconJ. S. Williams, H. Bernas, M. C. Ridgway et al.|MRS Proceedings|2000Cited by 0
Interactions of Point Defects and Impurities With Open Volume Defects in SiliconJ. S. Williams, H. Bernas, M-O. Ruault et al.|HAL (Le Centre pour la Communication Scientifique Directe)|2001Cited by 0
Interaction of point defects and impurities with open volume defects in siliconJ. S. Williams, H. Bernas, B. C. Williams et al.|Unknown|2010Cited by 0