Cited by 1.2k
DuPont (United States)
Publishes on Carbon Nanotubes in Composites, Mechanical and Optical Resonators, Force Microscopy Techniques and Applications. 26 papers and 2k citations.
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We have measured the temperature-dependent thermal conductivity kappa(T) of individual multiwall boron nitride nanotubes using a microfabricated test fixture that allows direct transmission electron microscopy characterization of the tube being measured. kappa(T) is exceptionally sensitive to isotopic substitution, with a 50% enhancement in kappa(T) resulting for boron nitride nanotubes with 99.5% 11B. For isotopically pure boron nitride nanotubes, kappa rivals that of carbon nanotubes of similar diameter.
We report on a method to locally remove material from carbon and boron nitride nanotubes using the low-energy focused electron beam of a scanning electron microscope. Using this method, clean precise cuts can be made into nanotubes, either part-way through (creating hingelike geometries) or fully through (creating size-selected nanotube segments). This cutting mechanism involves foreign molecular species and differs from electron-beam-induced knock-on damage in transmission electron microscopy.
We report on the precise positioning of a carbon nanotube on an atomic force microscope (AFM) tip. By using a nanomanipulator inside a scanning electron microscope, an individual nanotube was retrieved from a metal foil by the AFM tip. The electron beam allows us to control the nanotube length and to sharpen its end. The performance of these tips for AFM imaging is demonstrated by improved lateral resolution of DNA molecules. © 2005 IOP Publishing Ltd.
Live imaging of operating multiwall carbon nanotube (MWCNT-) based electronic devices is performed by high resolution transmission electron microscopy. Our measurements allow us to correlate electronic transport with changes in device structure. Surface contamination, contact annealing, and sequential wall removal are observed. Temperature profiles confirm diffusive conduction in MWCNTs in the high bias limit. This technique provides a general platform for studying nanoscale systems, where geometric configuration and electronic transport are intimately connected.