Electric-field and temperature dependence of the hole mobility in poly(p-phenylene vinylene)The current-voltage characteristics of poly(dialkoxy p-phenylene vinylene)-based hole-only devices are measured as a function of temperature. The hole current is space-charge limited, which provides a direct measurement of the hole mobility ${\mathrm{\ensuremath{\mu}}}_{\mathrm{p}}$ as a function of electric field E and temperature. The hole mobility exhibits a field dependence ln ${\mathrm{\ensuremath{\mu}}}_{\mathrm{p}}$\ensuremath{\propto}$\sqrt{E}$ as has also been observed from time-of-flight experiments in many molecularly doped polymers and amorphous glasses. For the zero-field hole mobility an activation energy of 0.48 eV is obtained. The combination of a field-dependent mobility and space-charge effects provides a consistent description of the hole conduction in conjugated polymer films as a function of voltage, temperature, and layer thickness.
Electron and hole transport in poly(<i>p</i>-phenylene vinylene) devicesThe transport properties of electrons and holes in poly(dialkoxy-p-phenylene vinylene) (PPV) are investigated by current–voltage measurements using Ca as an electron and indium-tin-oxide as a hole injecting contact. Both the electron and hole currents are dominated by the bulk conduction properties of the PPV, in contrast to previous reports. The hole current is governed by bulk space-charge limited conductivity and a hole mobility of 0.5×10−6 cm2/V s is determined. The electron current is strongly reduced by the presence of traps with a total density of 1018 cm−3.
Andreev Reflection in Ferromagnet-Superconductor JunctionsThe transport properties of a ferromagnet-superconductor (FS) junction are studied in a scattering formulation. Andreev reflection at the FS interface is strongly affected by the exchange interaction in the ferromagnet. The conductance ${G}_{\mathrm{FS}}$ of a ballistic point contact between F and S can be either larger or smaller than the value ${G}_{\mathrm{FN}}$ with the superconductor in the normal state, depending on the ratio of the exchange and Fermi energies. If the ferromagnet contains a tunnel barrier (I), the conductance ${G}_{\mathrm{FIFS}}$ exhibits resonances which do not vanish in linear response---in contrast to the Tomasch oscillations for nonferromagnetic materials.
Hydrodynamic electron flow in high-mobility wiresM. J. M. de Jong, L. W. Molenkamp|Physical review. B, Condensed matter|1995 Hydrodynamic electron flow is experimentally observed in the differential resistance of electrostatically defined wires in the two-dimensional electron gas in (Al,Ga)As heterostructures. In these experiments current heating is used to induce a controlled increase in the number of electron-electron collisions in the wire. The interplay between the partly diffusive wire-boundary scattering and the electron-electron scattering leads first to an increase and then to a decrease of the resistance of the wire with increasing current. These effects are the electronic analog of Knudsen and Poiseuille flow in gas transport, respectively. The electron flow is studied theoretically through a Boltzmann transport equation, which includes impurity, electron-electron, and boundary scattering. A solution is obtained for arbitrary scattering parameters. By calculation of flow profiles inside the wire it is demonstrated how normal flow evolves into Poiseuille flow. The boundary-scattering parameters for the gate-defined wires can be deduced from the magnitude of the Knudsen effect. Good agreement between experiment and theory is obtained.
Shot-Noise Suppression in the Single-Electron Tunneling RegimeElectrical current fluctuations through tunnel junctions are studied with a scanning-tunneling microscope. For single-tunnel junctions classical Poisson shot noise is observed, indicative for uncorrelated tunneling of electrons. For double-barrier tunnel junctions, formed by a nanoparticle between tip and surface, the shot noise is observed to be suppressed below the Poisson value. For strongly asymmetric junctions, where a Coulomb staircase is observed in the current-voltage characteristic, the shot-noise suppression is periodic in the applied voltage. This originates from correlations in the transfer of electrons imposed by single-electron charging effects.