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Amorphous-Silicon Thin-Film Transistors Fabricated at 300 $^{\circ}\hbox{C}$ on a Free-Standing Foil Substrate of Clear PlasticKunigunde H. Cherenack, S. Wagner, Alex Z. Kattamis et al.|IEEE Electron Device Letters|2007Cited by 60
Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear PlasticBahman Hekmatshoar, M. Hack, Alex Z. Kattamis et al.|IEEE Electron Device Letters|2008Cited by 33
Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison frameworkBahman Hekmatshoar, James C. Sturm, S. Wagner|Applied Physics Letters|2009Cited by 28
Effect of $\hbox{SiN}_{x}$ Gate Dielectric Deposition Power and Temperature on a-Si:H TFT StabilityAlex Z. Kattamis, S. Wagner, I‐Chun Cheng et al.|IEEE Electron Device Letters|2007Cited by 22