Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutionsMichel Houssa, Marc Heyns, L. Pantisano et al.|Materials Science and Engineering R Reports|2006Cited by 278
First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)Michel Houssa, Marc Heyns, G. Pourtois et al.|Applied Physics Letters|2008Cited by 71
Electronic properties of (100)Ge/Ge(Hf)O2 interfaces: A first-principles studyMichel Houssa, M. M. Heyns, G. Pourtois et al.|Surface Science|2008Cited by 38
H 2 S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surfaceMichel Houssa, M. M. Heyns, Daniël Nelis et al.|Applied Physics Letters|2007Cited by 34
Asymmetry and Switching Phenomenology in TiN\(Al2O3)\HfO2\Hf SystemsL. Goux, M. Jurczak, Yangyin Chen et al.|ECS Solid State Letters|2012Cited by 21