Effect of Carrier Localization and Shockley-Read-Hall Recombination on the Spatial Distribution of Electroluminescence in InGaN LEDsZhangbao Peng, Zhong Chen, Yijun Lü et al.|IEEE photonics journal|2018Cited by 46
Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting DiodesZhangbao Peng, Zhong Chen, Yicheng Zheng et al.|IEEE photonics journal|2020Cited by 17
On a relationship among optical power, current density, and junction temperature for InGaN-based light-emitting diodesZiquan Guo, Zhong Chen, Tien‐Mo Shih et al.|AIP Advances|2017Cited by 9
Evolution of crystal imperfections during current-stress ageing tests of green InGaN light-emitting diodesYue Lin, Zhuguang Liu, Zhangbao Peng et al.|Applied Physics Express|2016Cited by 7
Multi-Azimuth Failure Mechanisms in Phosphor-Coated White LEDs by Current Aging StressesZhangbao Peng, Zhong Chen, Ziquan Guo et al.|Preprints.org|2018Cited by 2