25-nm p-channel vertical MOSFETs with SiGeC source-drainsMin Yang, James C. Sturm, Malcolm S. Carroll et al.|IEEE Electron Device Letters|1999Cited by 45
Low-Temperature Preparation of Oxygen- and Carbon-Free Silicon and Silicon-Germanium Surfaces for Silicon and Silicon-Germanium Epitaxial Growth by Rapid Thermal Chemical Vapor DepositionMalcolm S. Carroll, Min Yang, James C. Sturm|Journal of The Electrochemical Society|2000Cited by 37
Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structuresMin Yang, Jean H. Prévost, James C. Sturm|Physical review. B, Condensed matter|1997Cited by 32
Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor DepositionMin Yang, Temel Büyüklimanli, Malcolm S. Carroll et al.|Journal of The Electrochemical Society|2000Cited by 28