Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junctionZhaoquan Zeng, Gregory J. Salamo, Shui-Qing Yu et al.|AIP Advances|2013Cited by 79
Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applicationsBader Alharthi, Shui-Qing Yu, Wei Dou et al.|Applied Surface Science|2019Cited by 18
Bismuth nano-droplets for group-V based molecular-beam droplet epitaxyChen Li, Gregory J. Salamo, Zhaoquan Zeng et al.|Applied Physics Letters|2011Cited by 17
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effectJustin Rudie, Shui-Qing Yu, Huong Tran et al.|Applied Physics Letters|2025Cited by 0
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effectJustin Rudie, Shui-Qing Yu, Huong Tran et al.|arXiv (Cornell University)|2025Cited by 0