Reliability-Aware Ultra-Scaled IDG-InGaZnO-FET Compact Model to Enable Cross-layer Co-design for Highly Efficient Analog Computing in 2T0C-DRAMLihua Xu, Ming Liu, Linfang Wang et al.|Unknown|2023Cited by 11
Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point MemoryYaxin Ding, Qing Luo, Junjie An et al.|Advanced Electronic Materials|2022Cited by 7