K

K. Zhang

University of Michigan–Ann Arbor

Publishes on Semiconductor Quantum Structures and Devices, Organic Electronics and Photovoltaics, Advanced Thermoelectric Materials and Devices. 2 papers and 1.6k citations.

2Publications
1.6kTotal Citations
Semiconductor Quantum Structures and DevicesOrganic Electronics and PhotovoltaicsAdvanced Thermoelectric Materials and DevicesSemiconductor materials and devicesConducting polymers and applications

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Top publicationsby citations

Recombination characteristics of minority carriers near the AlxOy/GaAs interface using the light beam induced current technique
H. Gebretsadik, K. Zhang, K. Kamath et al.|Applied Physics Letters|1997
Cited by 9Open Access

The light beam induced current (LBIC) technique was used to characterize the interface formed by the wet oxidation of AlAs and AlxGa1−xAs (x=0.98 and 0.95). LBIC scans were used to calculate the diffusion lengths of minority carriers both in the bulk and near these interfaces; and the corresponding interface recombination velocities were estimated. The interface recombination velocity at the oxide/semiconductor interface is 3.13×105 cm/s for AlAs, and 1.90×104 cm/s for Al0.98Ga0.02As. It is found that the addition of gallium in the AlAs can significantly improve this property.