Recombination characteristics of minority carriers near the AlxOy/GaAs interface using the light beam induced current technique

Abstract

The light beam induced current (LBIC) technique was used to characterize the interface formed by the wet oxidation of AlAs and AlxGa1−xAs (x=0.98 and 0.95). LBIC scans were used to calculate the diffusion lengths of minority carriers both in the bulk and near these interfaces; and the corresponding interface recombination velocities were estimated. The interface recombination velocity at the oxide/semiconductor interface is 3.13×105 cm/s for AlAs, and 1.90×104 cm/s for Al0.98Ga0.02As. It is found that the addition of gallium in the AlAs can significantly improve this property.