Optical switching at 1.55 <i>μ</i>m in silicon racetrack resonators using phase change materialsAn optical switch operating at a wavelength of 1.55 μm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical properties upon transitions between its crystalline and amorphous structural phases. These transitions are triggered using a pulsed laser diode at λ = 975 nm and used to tune the resonant frequency of the resonator and the resultant modulation depth of the 1.55 μm transmitted light.
Novel compact polarization converters based on ultra short bendsC. van Dam, L.H. Spiekman, F.P.G.M. van Ham et al.|IEEE Photonics Technology Letters|1996 A novel integrated polarization converter based on ultra short bends is presented, which has a potential for low loss and small device size. A conversion value of 85% was experimentally measured with excess loss of 2.7 dB and overall dimensions of 975×83 μm. Also 45% conversion was measured with extremely low excess loss of 0.4 dB for a device size of 760×86 μm.
A Compact Integrated Polarization Splitter/Converter in InGaAsP–InPLuc Augustin, R. Hanfoug, J.J.G.M. van der Tol et al.|IEEE Photonics Technology Letters|2007 A novel design for an integrated passive polarization splitter/converter combination is presented. The device consists of a Mach-Zehnder interferometer with polarization converters in both arms. The device is analyzed using the transfer matrix method and fabricated in InGaAsP-InP. Measurement results show a splitting ratio of approximately 10 dB and a conversion of >90%. This device can be monolithically integrated with passive and active components.
Indium Phosphide Integrated Photonics in MembranesJ.J.G.M. van der Tol, Yuqing Jiao, Longfei Shen et al.|IEEE Journal of Selected Topics in Quantum Electronics|2017 Integrating electronic and photonic functions has become a major issue in the last decade. This integration requires small photonic circuits that are compatible with CMOS processing. Here an approach using an indium phosphide based membrane is reviewed. The high index contrast, leading to micron-sized devices, the full set of photonic functions, including lasers, and the possibility to add these membranes to realized CMOS-circuits, make this an attractive option for hybrid integration. In this paper, the concepts and the required technologies are introduced. A range of realized and proposed membrane devices will be presented, and the prospects of this technique will be discussed.
A new short and low-loss passive polarization converter on InPJ.J.G.M. van der Tol, F. Hakimzadeh, J.W. Pedersen et al.|IEEE Photonics Technology Letters|1995 We propose an improved polarization converter in InGaAsP-InP. It contains a series of waveguide sections with asymmetric cross-sections with angled facets. A 09-mm-long TE/TM-converter at a wavelength of 1.5 μm is simulated. It contains 10 sections and has an excess loss of 0.25 dB. Both coupled mode theory and beam propagation method (BPM) simulations are included.