Delft University of Technology
Publishes on Photonic and Optical Devices, Optical Network Technologies, Semiconductor Lasers and Optical Devices. 7 papers and 214 citations.
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A novel integrated polarization converter based on ultra short bends is presented, which has a potential for low loss and small device size. A conversion value of 85% was experimentally measured with excess loss of 2.7 dB and overall dimensions of 975×83 μm. Also 45% conversion was measured with extremely low excess loss of 0.4 dB for a device size of 760×86 μm.
A four-channel phased-array wavelength demultiplexer with a flattened wavelength response has been realised for the first time in InP/InGaAsP at 1.54 µm by employing multimode output waveguides. The device has 2 nm channel spacing and a flat response (within 1 dB) of 1 nm.
A method for designing polarization independent phased-array wavelength demultiplexers, using different array orders for TE and TM, is described and analyzed with respect to fabrication variations. Flattening of the wavelength response is shown to improve fabrication tolerances. A four channel phased-array wavelength demultiplexer with at least 0.2 nm of polarization independent flattened response for each channel (spacing 1 nm) has been made with an insertion loss of 1.5-3 dB and a crosstalk of -17 to -19 dB.
A novel type of wavelength demultiplexer is presented based on a generalized multimode interference/Mach Zehnder interferometer (MMI-MZI) configuration. This device combines the potential of low loss and high uniformity of the output channels with a small device size. Feasibility of the novel concept is demonstrated experimentally for a 4-channel demultiplexer with 4 nm channel spacing. Dimensions are 2800*106 mu m, which is the smallest device size reported so far
Optical waveguide crossings are becoming increasingly important due to the increasing complexity of optical chips. In switching matrices [1], multiwavelength add drop filters [2] and optical crossconnects [3] worst-case paths may contain more than five or even ten crossings. In fibre-matched waveguides structures as used in lithium niobate or silica-based technology, crossings with very low crosstalk and loss can be realised [4,5]. We have found that in highly integrated semiconductor devices crossings may contribute significantly to the loss and crosstalk performance. In this paper we present the results of a series of experiments for design of high-performance semiconductor waveguide crossings.