Effect of Strain in Channel on Electron Transport Properties of Ga<sub>1−<i>x</i></sub>In<sub><i>x</i></sub>Sb High Electron Mobility Transistor Structures with Strained‐Al<sub>0.40</sub>In<sub>0.60</sub>Sb/Al<sub>0.25</sub>In<sub>0.75</sub>Sb Stepped BufferAkira Endoh, Hiroki I. Fujishiro, Naoyuki Kishimoto et al.|physica status solidi (a)|2022Cited by 6