Effect of Strain in Channel on Electron Transport Properties of Ga<sub>1−<i>x</i></sub>In<sub><i>x</i></sub>Sb High Electron Mobility Transistor Structures with Strained‐Al<sub>0.40</sub>In<sub>0.60</sub>Sb/Al<sub>0.25</sub>In<sub>0.75</sub>Sb Stepped Buffer
Akira Endoh(Tokyo University of Science), Hiroki I. Fujishiro(Tokyo University of Science), Akifumi Kasamatsu(National Institute of Information and Communications Technology), Yuta Kemmochi(Tokyo University of Science), Shinsuke Hara(National Institute on Consumer Education), Mizuho Hiraoka(Tokyo University of Science), Yuki Endoh(Tokyo University of Science), Ryuto Machida(Tokyo University of Science), Koharu Hatori(Tokyo University of Science), Takuya Hayashi(Shinshu University), Issei Watanabe(National Institute of Information and Communications Technology), Yoshimi Yamashita(National Institute of Information and Communications Technology), Koki Osawa(Tokyo University of Science), Naoyuki Kishimoto(Tokyo University of Science)
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