Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated CircuitsPower has become the primary design constraint for chip designers today. While Moore's law continues to provide additional transistors, power budgets have begun to prohibit those devices from actually being used. To reduce energy consumption, voltage scaling techniques have proved a popular technique with subthreshold design representing the endpoint of voltage scaling. Although it is extremely energy efficient, subthreshold design has been relegated to niche markets due to its major performance penalties. This paper defines and explores near-threshold computing (NTC), a design space where the supply voltage is approximately equal to the threshold voltage of the transistors. This region retains much of the energy savings of subthreshold operation with more favorable performance and variability characteristics. This makes it applicable to a broad range of power-constrained computing segments from sensors to high performance servers. This paper explores the barriers to the widespread adoption of NTC and describes current work aimed at overcoming these obstacles.
New paradigm of predictive MOSFET and interconnect modeling for early circuit simulationA new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L/sub eff/, T/sub ok/, V/sub t/, R/sub dsw/ and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18 /spl mu/m and 0.13 /spl mu/m technology nodes with L/sub eff/ down to 70 nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.
A Portable 2-Transistor Picowatt Temperature-Compensated Voltage Reference Operating at 0.5 VMingoo Seok, Gyouho Kim, David Blaauw et al.|IEEE Journal of Solid-State Circuits|2012 Sensing systems such as biomedical implants, infrastructure monitoring systems, and military surveillance units are constrained to consume only picowatts to nanowatts in standby and active mode, respectively. This tight power budget places ultra-low power demands on all building blocks in the systems. This work proposes a voltage reference for use in such ultra-low power systems, referred to as the 2T voltage reference, which has been demonstrated in silicon across three CMOS technologies. Prototype chips in 0.13 μm show a temperature coefficient of 16.9 ppm/°C (best) and line sensitivity of 0.033%/V, while consuming 2.22 pW in 1350 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The lowest functional V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dd</sub> 0.5 V. The proposed design improves energy efficiency by 2 to 3 orders of magnitude while exhibiting better line sensitivity and temperature coefficient in less area, compared to other nanowatt voltage references. For process spread analysis, 49 dies are measured across two runs, showing the design exhibits comparable spreads in TC and output voltage to existing voltage references in the literature. Digital trimming is demonstrated, and assisted one temperature point digital trimming, guided by initial samples with two temperature point trimming, enables TC <; 50 ppm/°C and ±0.35% output precision across all 25 dies. Ease of technology portability is demonstrated with silicon measurement results in 65 nm, 0.13 μm, and 0.18 μm CMOS technologies.
Theoretical and practical limits of dynamic voltage scalingDynamic voltage scaling (DVS) is a popular approach for energy reduction of integrated circuits. Current processors that use DVS typically have an operating voltage range from full to half of the maximum Vdd. However, it is possible to construct designs that operate over a much larger voltage range: from full Vdd to subthreshold voltages. This possibility raises the question of whether a larger voltage range improves the energy efficiency of DVS. First, from a theoretical point of view, we show that for subthreshold supply voltages leakage energy becomes dominant, making "just in time completion" energy inefficient. We derive an analytical model for the minimum energy optimal voltage and study its trends with technology scaling. Second, we use the proposed model to study the workload activity of an actual processor and analyze the energy efficiency as a function of the lower limit of voltage scaling. Based on this study, we show that extending the voltage range below 1/2 Vdd will improve the energy efficiency for most processor designs, while extending this range to subthreshold operation is beneficial only for very specific applications. Finally, we show that operation deep in the subthreshold voltage range is never energy-efficient.
Neural Cache: Bit-Serial In-Cache Acceleration of Deep Neural NetworksThis paper presents the Neural Cache architecture, which re-purposes cache structures to transform them into massively parallel compute units capable of running inferences for Deep Neural Networks. Techniques to do in-situ arithmetic in SRAM arrays, create efficient data mapping and reducing data movement are proposed. The Neural Cache architecture is capable of fully executing convolutional, fully connected, and pooling layers in-cache. The proposed architecture also supports quantization in-cache. Our experimental results show that the proposed architecture can improve inference latency by 8.3× over state-of-art multi-core CPU (Xeon E5), 7.7× over server class GPU (Titan Xp), for Inception v3 model. Neural Cache improves inference throughput by 12.4× over CPU (2.2× over GPU), while reducing power consumption by 50% over CPU (53% over GPU).