Atomic Layer Deposited Amorphous Ge-Doped Indium Oxide with Enhanced Mobility-Stability-Crystallization Resistance Tradeoff
Yushan Lee(University of Notre Dame), Kai Ni(Rochester Institute of Technology), Yixin Qin(University of Notre Dame), Jiahui Duan(University of Notre Dame), Serges Zambou(ASM International (Finland)), Shan Deng(University of Notre Dame), Alessandra Leonhardt(ASM International (Finland)), Sizhe Ma(Carnegie Mellon University), Ranjith K. Ramachandran(Ghent University Hospital), G. D. Wilk(Harvard University), Christopher L. Hinkle(University of Notre Dame), Pengyu Ren(University of Notre Dame), Guanyu Zhou(University of Notre Dame), Aditya Chauhan(ASM International (Finland)), Xiao Gong(National University of Singapore), Md Abdullah Al Mamun, Zijian Zhao(University of Notre Dame), Yiyan Yu(University of Notre Dame), Kyeongjae Cho, Xingtian Wang(University of Notre Dame)
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