Evaluation of the high mobility and stability of InGaZnO/InSnZnO bilayer thin-film transistors via quantitative defect analysis
Teklebrahan Gebrekrstos Weldemhret(Dongguk University), Kwun‐Bum Chung(Dongguk University), Dong‐Joon Yi(Dongguk University), Kwangsik Jeong(Yonsei University)
Cited by 2
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