Finite Element Analysis of the Asymmetric Warpage Induced by the Oxidation Process in Trench Insulated Gate Bipolar Transistor (Trench IGBT) 12” Si Patterned Wafers
Vincenzo Vinciguerra(STMicroelectronics (Switzerland)), Andrea Li Bassi(Politecnico di Milano), Marco Renna(STMicroelectronics (Switzerland)), Fabrice Roqueta(STMicroelectronics (France)), P. Zuliani, Davide Fagiani, Simone Dario Mariani, Giuseppe Luigi Malgioglio(STMicroelectronics (Italy)), F. Sabatini(Politecnico di Milano), Mohamed Boutaleb(STMicroelectronics (France))
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