Evolution of Defect States within the Band Gap of Indium–Tin–Zinc Oxide Thin Film Transistors Using the Quantitative Defect Analysis Method
Dong Yeob Shin(Dongguk University), Kwun‐Bum Chung(Dongguk University), Hyunmin Hong(Dongguk University), Kwangsik Jeong(Yonsei University), Min Jung Kim(Dongguk University), Sunwoo Lee(Samsung (South Korea)), Young‐Gil Park(Samsung (South Korea)), Jinyoung Go(Dongguk University), Teklebrahan Gebrekrstos Weldemhret(Dongguk University)
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