Author response for "Quantum anomalous Hall effect in nonmagnetic bismuth monolayer with a high Chern number"
Zequn Zhang(Shenzhen University), Chengwang Niu(Shandong University), Baibiao Huang(Shandong University), Yingxi Bai(Shandong University), Runhan Li(Chinese Academy of Sciences), Ying Dai(Shandong University), Yilin Zhang
Cited by 0
Related Papers
Evidence of the Existence of Magnetism in Pristine VX<sub>2</sub> Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties
|ACS Nano|2012|852
Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers
|Physical Chemistry Chemical Physics|2011|506
Graphene adhesion on MoS2 monolayer: An ab initio study
|Nanoscale|2011|383