Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers
Yandong Ma(Lanzhou University of Technology), Baibiao Huang(Shandong University), Jibao Lu(Shandong University), Meng Guo(Changchun University of Chinese Medicine), Chengwang Niu(Shandong University), Ying Dai(Shandong University)
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