Gate‐tunable <scp>Berry</scp> curvature in <scp>van der Waals</scp> itinerant ferromagnetic <scp>Cr<sub>7</sub>Te<sub>8</sub></scp>
K. Y. Meng(Collaborative Innovation Center of Advanced Microstructures), Hongtao Yuan(National Engineering Research Center of Electromagnetic Radiation Control Materials), Zeya Li(Collaborative Innovation Center of Advanced Microstructures), Jinxiong Wu(Yili Normal University), Lingyun Xu(Nankai University), Feng Luo(Nankai University), Zhansheng Gao(Henan University), Junwei Huang(Collaborative Innovation Center of Advanced Microstructures), Caiyu Qiu(Nanyang Technological University), Xiangyu Bi(Collaborative Innovation Center of Advanced Microstructures), Peng Chen(Qilu University of Technology), Feng Qin(Collaborative Innovation Center of Advanced Microstructures)
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