Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi <sub>2</sub> O <sub>2</sub> Se
Cheng Chen(University of Oxford), Yulin Chen(Tsinghua University), Sandy Adhitia Ekahana(University of Oxford), Meixiao Wang(ShanghaiTech University), Ding Pei(University of Oxford), Binghai Yan(Max Planck Institute for Chemical Physics of Solids), Huixia Fu(Weizmann Institute of Science), Jinxiong Wu(Peking University), Hailin Peng(Peking University), Jinfeng Jia(Shanghai Jiao Tong University), Niels B. M. Schröter(Paul Scherrer Institute), Yan Sun(University of Science and Technology of China), Xiang Xu(Central South University), Shuai Liu(ShanghaiTech University), Gang Li(Nanchang University), Hongtao Yuan(SLAC National Accelerator Laboratory), Han Peng(University of Oxford), Haifeng Yang(Shanghai Institute of Microsystem and Information Technology), Yiwei Li(University of Oxford), Zhen Tian(ShanghaiTech University), Zhongkai Liu(ShanghaiTech University), Jiamin Xue(ShanghaiTech University), Teng Tu(Beijing National Laboratory for Molecular Sciences), Juan Jiang(Fudan University)
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