Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi <sub>2</sub> O <sub>2</sub> Se
Cheng Chen(University of Oxford), Yulin Chen(University of Oxford), Sandy Adhitia Ekahana(University of Oxford), Meixiao Wang(ShanghaiTech University), Ding Pei(University of Oxford), Binghai Yan(American Committee for the Weizmann Institute of Science), Huixia Fu(Chongqing University), Jinxiong Wu(Yili Normal University), Hailin Peng(Beijing National Laboratory for Molecular Sciences), Jinfeng Jia(Shanghai Jiao Tong University), Niels B. M. Schröter(Paul Scherrer Institute), Yan Sun(University of Science and Technology of China), Xiang Xu(Central South University), Shuai Liu(ShanghaiTech University), Gang Li(ShanghaiTech University), Hongtao Yuan(National Engineering Research Center of Electromagnetic Radiation Control Materials), Han Peng(University of Oxford), Haifeng Yang(Shanghai Institute of Microsystem and Information Technology), Yiwei Li(University of Oxford), Zhen Tian(ShanghaiTech University), Zhongkai Liu(ShanghaiTech University), Jiamin Xue(Zhejiang Ocean University), Teng Tu(Beijing National Laboratory for Molecular Sciences), Juan Jiang(Fudan University)
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