High-quality HfO2/HfSe2 gate stack for low-power steep-switching computing devices
Sungjoo Lee(Tohoku University), Yong‐Hoon Kim(Korea Advanced Institute of Science and Technology), Taeho Kang(Sungkyunkwan University), Haeju Choi(Samsung (South Korea)), Joonho Park(Korea Advanced Institute of Science and Technology), Nayeong Lee(Seoul National University of Science and Technology), Jongwook Jeon(Konkuk University), Hanggyo Jung(The University of Texas at Dallas)
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