High‐Brightness GaN‐Based Blue Light‐Emitting Diodes Using AlON Buffer Layer on 4 In.‐Patterned Sapphire Substrate: Low‐Dislocation‐Defect Epitaxy, Growth Mechanisms, and Higher Device Performance
Minghang Li(Zhejiang University), Kostya Ostrikov(Queensland University of Technology), Qijin Cheng(Xiamen University), Shuming Bai(Chinese Academy of Sciences), Jiasheng Zhang(San’an Optoelectronics (China)), Jiarong Zeng(Sichuan University), Kelvin H. L. Zhang(Shenzhen University), Xueliang Zhu(San’an Optoelectronics (China)), Wen‐Cheng Chen(Guangdong University of Technology)
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