High‐Brightness GaN‐Based Blue Light‐Emitting Diodes Using AlON Buffer Layer on 4 In.‐Patterned Sapphire Substrate: Low‐Dislocation‐Defect Epitaxy, Growth Mechanisms, and Higher Device PerformanceMinghang Li, Kostya Ostrikov, Jiasheng Zhang et al.|physica status solidi (RRL) - Rapid Research Letters|2023Cited by 1