Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition
Zhe Chuan Feng(Kennesaw State University), Ian T. Ferguson(Kennesaw State University), Shi‐Jane Tsai(National Taiwan University), Hao-Hsiung Lin(National Taiwan University), Bin Xin(Jiaxing University), Jeffrey Yiin(Kennesaw State University), Vishal Saravade(Pennsylvania State University), Benjamin Klein(Kennesaw State University)
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