Gate-mediated transition between antiferromagnetic topological and Chern insulators in honeycomb <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>X</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">MnN</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo>(</mml:mo><mml:mi>X</mml:mi><mml:mo>=</mml:mo><mml:mi>Sr</mml:mi><mml:mo>,</mml:mo><mml:mi>Ba</mml:mi><mml:mo>)</mml:mo></mml:math>

Xiaorong Zou(Unknown), Chengwang Niu(Shandong University), Baibiao Huang(Shandong University), Hongkai Ma(Shandong University), Runhan Li(Chinese Academy of Sciences), Ying Dai(Shandong University)
Physical review. B./Physical review. B
August 25, 2022
Cited by 10


Related Papers