Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction
Timothy A. Morgan(Naval Surface Warfare Center), Morgan E. Ware(University of Arkansas at Fayetteville), Robert Sleezer(Minnesota State University, Mankato), Fikadu Alema(Agnitron Technology (United States)), Justin Rudie(University of Arkansas at Fayetteville), Nazar Orishchin(Agnitron Technology (United States)), A. Osinsky(SVT Associates (United States)), Gregory Salamo(University of Arkansas at Fayetteville), Mohammad Zamani‐Alavijeh(University of Arkansas at Fayetteville)
Cited by 9
Related Papers
Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
|AIP Advances|2013|79
Scalable Chitosan-Graphene Oxide Membranes: The Effect of GO Size on Properties and Cross-Flow Filtration Performance
|ACS Omega|2017|77
Dark Current Analysis on GeSn p-i-n Photodetectors
|Sensors|2023|45
InGaAs quantum wire intermediate band solar cell
|Applied Physics Letters|2012|23
Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
|Journal of Applied Physics|2008|18