Temperature-Dependent Oxygen Annealing Effect on the Properties of Ga2o3 Thin Film Deposited by Atomic Layer Deposition
Lin Gu(Tianjin University of Science and Technology), Qing‐Chun Zhang(Ningbo University), Yi Shen(Fudan University), Ruo-Yun Yang(Fudan University), Lei Yang(Wuhan University of Technology), Hongping Ma(Fudan University), Wenjie Chen(Xiamen University), Jingtao Zhu(Fujian Medical University), Yu-Hang Zeng(Fudan University), Xi-Rui Wang(Fudan University), Fanzhengshu Wu(Fudan University), Jie Zhang(Fudan University)
Cited by 4
Related Papers
Electronic‐Grade High‐Quality Perovskite Single Crystals by a Steady Self‐Supply Solution Growth for High‐Performance X‐ray Detectors
|Advanced Materials|2020|112
Robot-assisted laser additive manufacturing for high-strength/low-porosity continuous fiber-reinforced thermoplastic composites
|Composites Science and Technology|2023|40
Visualization of low-frequency liquid surface acoustic waves by means of optical diffraction
|Applied Physics Letters|2002|39
Anti-depressant effects of acupuncture: The insights from NLRP3 mediated pyroptosis and inflammation
|Neuroscience Letters|2022|35