Topological Field-Effect Transistor Based on Quasi-Two-Dimensional Tellurium Flakes

Bin Cheng(Collaborative Innovation Center of Advanced Microstructures), Changgan Zeng(University of Science and Technology of China), Ling Zhang(Max Planck Institute for the Structure and Dynamics of Matter), Xianglin Li(University of Science and Technology of China), Nan Zhang(University of Science and Technology of China), Lin Li(University of Science and Technology of China), Hui Li(Chongqing University), Zhiyong Lin(University of Science and Technology of China), Zhengfei Wang(University of Science and Technology of China)
Physical Review Applied
May 26, 2022
10.1103/physrevapplied.17.054044
Cited by 15

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