Near-unity photoluminescence quantum yield in MoS <sub>2</sub>

Matin Amani(Lawrence Berkeley National Laboratory), Der‐Hsien Lien(Lawrence Berkeley National Laboratory), Daisuke Kiriya(Lawrence Berkeley National Laboratory), Jun Xiao(U.S. National Science Foundation), Angelica Azcatl(The University of Texas at Dallas), Ji-Young Noh(The University of Texas at Dallas), Surabhi R. Madhvapathy(Lawrence Berkeley National Laboratory), Rafik Addou(The University of Texas at Dallas), Santosh KC(The University of Texas at Dallas), Madan Dubey(DEVCOM Army Research Laboratory), Kyeongjae Cho(The University of Texas at Dallas), Robert M. Wallace(The University of Texas at Dallas), Si‐Chen Lee(National Taiwan University), Jr‐Hau He(King Abdullah University of Science and Technology), Joel W. Ager(Lawrence Berkeley National Laboratory), Xiang Zhang(U.S. National Science Foundation), Eli Yablonovitch(Lawrence Berkeley National Laboratory), Ali Javey(Lawrence Berkeley National Laboratory)
Science
November 26, 2015
Cited by 1,200Open Access
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Abstract

Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low. The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QY of 0.6%, which indicates a considerable defect density. Here we report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude. The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a final QY of more than 95%, with a longest-observed lifetime of 10.8 ± 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.


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