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Eli Yablonovitch

University of California, Berkeley

ORCID: 0000-0002-5724-3375

Publishes on Photonic and Optical Devices, Photonic Crystals and Applications, Semiconductor Quantum Structures and Devices. 629 papers and 53.1k citations.

629Publications
53.1kTotal Citations

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Top publicationsby citations

Inhibited Spontaneous Emission in Solid-State Physics and Electronics
Eli Yablonovitch|Physical Review Letters|1987
Cited by 13.9kOpen Access

It has been recognized for some time that the spontaneous emission by atoms is not necessarily a fixed and immutable property of the coupling between matter and space, but that it can be controlled by modification of the properties of the radiation field. This is equally true in the solid state, where spontaneous emission plays a fundamental role in limiting the performance of semiconductor lasers, heterojunction bipolar transistors, and solar cells. If a three-dimensionally periodic dielectric structure has an electromagnetic band gap which overlaps the electronic band edge, then spontaneous emission can be rigorously forbidden.

High-impedance electromagnetic surfaces with a forbidden frequency band
Daniel F. Sievenpiper, Lijun Zhang, R.F.J. Broas et al.|IEEE Transactions on Microwave Theory and Techniques|1999
Cited by 4.2k

A new type of metallic electromagnetic structure has been developed that is characterized by having high surface impedance. Although it is made of continuous metal, and conducts dc currents, it does not conduct ac currents within a forbidden frequency band. Unlike normal conductors, this new surface does not support propagating surface waves, and its image currents are not phase reversed. The geometry is analogous to a corrugated metal surface in which the corrugations have been folded up into lumped-circuit elements, and distributed in a two-dimensional lattice. The surface can be described using solid-state band theory concepts, even though the periodicity is much less than the free-space wavelength. This unique material is applicable to a variety of electromagnetic problems, including new kinds of low-profile antennas.

Photonic band-gap structures
Eli Yablonovitch|Journal of the Optical Society of America B|1993
Cited by 1.5k

The analogy between electromagnetic wave propagation in multidimensionally periodic structures and electron-wave propagation in real crystals has proven to be a fruitful one. Initial efforts were motivated by the prospect of a photonic band gap, a frequency band in three-dimensional dielectric structures in which electromagnetic waves are forbidden irrespective of the propagation direction in space. Today many new ideas and applications are being pursued in two and three dimensions and in metallic, dielectric, and acoustic structures. We review the early motivations for this research, which were derived from the need for a photonic band gap in quantum optics. This need led to a series of experimental and theoretical searches for the elusive photonic band-gap structures, those three-dimensionally periodic dielectric structures that are to photon waves as semiconductor crystals are to electron waves. We describe how the photonic semiconductor can be doped, producing tiny electromagnetic cavities. Finally, we summarize some of the anticipated implications of photonic band structure for quantum electronics and for other areas of physics and electrical engineering.

Photonic band structure: The face-centered-cubic case employing nonspherical atoms
Eli Yablonovitch, T. J. Gmitter, K. Leung|Physical Review Letters|1991
Cited by 1.5kOpen Access

We introduce a practical, new, face-centered-cubic dielectric structure which simultaneously solves two of the outstanding problems in photonic band structure. In this new ``photonic crystal'' the atoms are nonspherical, lifting the degeneracy at the W point of the Brillouin zone, and permitting a full photonic band gap rather than a pseudogap. Furthermore, this fully three-dimensional fcc structure lends itself readily to microfabrication on the scale of optical wavelengths. It is created by simply drilling three sets of holes 35.26\ifmmode^\circ\else\textdegree\fi{} off vertical into the top surface of a solid slab or wafer, as can be done, for example, by chemical-beam-assisted ion etching.

Near-unity photoluminescence quantum yield in MoS <sub>2</sub>
Cited by 1.2kOpen Access

Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low. The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QY of 0.6%, which indicates a considerable defect density. Here we report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude. The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a final QY of more than 95%, with a longest-observed lifetime of 10.8 ± 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.