Failure Strength Weibull Analysis of 4H-SiC Die through a 3-PB test
Antonio Landi(Ente Ospedaliero Cantonale), Vincenzo Vinciguerra(STMicroelectronics (Switzerland)), Marco Renna(STMicroelectronics (Switzerland)), Michele Calabretta(STMicroelectronics (Italy)), Aye Aye Mon(STMicroelectronics (Singapore)), Alessandro Sitta(University of Catania), Laura Liaci(STMicroelectronics (Italy))
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