Effective defect passivation of CsPbBr<sub>3</sub> quantum dots using gallium cations toward the fabrication of bright perovskite LEDs
Jiantai Wang(Guangdong Academy of Sciences), Yushuai Xu(University of Science and Technology of China), Shenghan Zou(Guangdong Academy of Sciences), Chao Pang(Guangdong Academy of Sciences), Ruimin Cao(Guangdong Academy of Sciences), Zhangxu Pan(Guangdong Academy of Sciences), Chan Guo(Guangdong Academy of Sciences), Shiben Hu(Guangdong Academy of Sciences), Jiucheng Liu(Guangdong Academy of Sciences), Zhiyuan Xie(University of Science and Technology of China), Zheng Gong(Guangdong Academy of Sciences)
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Abstract
Trivalent gallium cations are introduced to passivate the surface defects of the CsPbBr 3 QDs. The resultant Ga-modified perovskite QDs are used to fabricate perovskite LEDs, which exhibit remarkably improved brightness and stability, compare with pristine QD-derived devices.
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