Ultralow contact resistance between semimetal and monolayer semiconductors
Pin‐Chun Shen(Massachusetts Institute of Technology), Cong Su(Lawrence Berkeley National Laboratory), Yuxuan Lin(Massachusetts Institute of Technology), Ang‐Sheng Chou(National Taiwan University), Chao-Ching Cheng(Taiwan Semiconductor Manufacturing Company (Taiwan)), Ji Hoon Park(Massachusetts Institute of Technology), Ming‐Hui Chiu(Massachusetts Institute of Technology), Ang‐Yu Lu(Massachusetts Institute of Technology), Hao‐Ling Tang(Massachusetts Institute of Technology), Mohammad Mahdi Tavakoli(Massachusetts Institute of Technology), Gregory Pitner(Taiwan Semiconductor Manufacturing Company (United States)), Xiang Ji(Massachusetts Institute of Technology), Zhengyang Cai(Massachusetts Institute of Technology), Nannan Mao(Massachusetts Institute of Technology), Jiangtao Wang(Massachusetts Institute of Technology), Vincent Tung(King Abdullah University of Science and Technology), Ju Li(Massachusetts Institute of Technology), Jeffrey Bokor(Lawrence Berkeley National Laboratory), Alex Zettl(Lawrence Berkeley National Laboratory), Chih‐I Wu(National Taiwan University), Tomás Palacios(Massachusetts Institute of Technology), Lain‐Jong Li(Taiwan Semiconductor Manufacturing Company (China)), Jing Kong(IIT@MIT)
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