The stability of faceted SiGe quantum dotes capped with a Si thin layer
Yueying Wu, Z. M. Jiang(Goodyear (United Kingdom)), Jin Zou(Xinjiang Institute of Engineering), Jinhui Lin, F. H. Li, Rongfei Wu
Queensland's institutional digital repository (The University of Queensland)
January 1, 2006
Cited by 0
Related Papers
Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection
|Advanced Materials|2017|285
High Thermoelectric Performance in p‐type Polycrystalline Cd‐doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering
|Advanced Energy Materials|2019|204
Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
|Advanced Materials|2014|194
Boosting the thermoelectric performance of p-type heavily Cu-doped polycrystalline SnSe <i>via</i> inducing intensive crystal imperfections and defect phonon scattering
|Chemical Science|2018|163
Super Large Sn<sub>1–<i>x</i></sub>Se Single Crystals with Excellent Thermoelectric Performance
|ACS Applied Materials & Interfaces|2019|52