Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
Nan Guo(Shanghai Institute of Technical Physics), Wei Lü(Shanghai Institute of Technical Physics), Jinshui Miao(Shanghai Institute of Technical Physics), Weida Hu(Shanghai Institute of Technical Physics), Lei Liao(Hunan University), Zhi Zhang(Electric Power Research Institute), Tao Jiang(Fudan University), Shiwei Wu(Fudan University), Jin Zou(Xinjiang Institute of Engineering), SenPo Yip(City University of Hong Kong), Johnny C. Ho(City University of Hong Kong)
Cited by 194
Related Papers
Photogating in Low Dimensional Photodetectors
|Advanced Science|2017|925
Ultrasensitive and Broadband MoS<sub>2</sub> Photodetector Driven by Ferroelectrics
|Advanced Materials|2015|833
Covalent Organic Frameworks with High Charge Carrier Mobility
|Chemistry of Materials|2011|824
TGF-β1 induces human alveolar epithelial to mesenchymal cell transition (EMT)
|Respiratory Research|2005|742
Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
|Science Advances|2017|587